Prospective students and postdocs

Our lab currently does not have openings for students or postdocs. All the positions for Fall 2024 have been filled. 

Our lab does not accept or host international visiting students or remote interns.

Our lab will regularly host the visiting engineers from our industry sponsors.  

Due to the high volume of inquiry, I may not reply to your email if your background does not fit with our on-going research projects.

Prof. Yu is serving IEEE CASS Distinguished Lecturer

Prof. Yu is selected as the Distinguished Lecturer for IEEE Circuits and Systems (CAS) society for 2021-2022, with the following two seminars available:

  • Circuit Design and Silicon Prototypes for Compute-in-Memory for Deep Learning
    Inference Engine
  • NeuroSim: A Benchmark Framework of Compute-in-Memory Hardware
    Accelerators from Devices/Circuits to Architectures/Algorithms

See the news article: https://www.ece.gatech.edu/news/642868/yu-appointed-ieee-cass-distinguished-lecturer

 

 

6 IEDM papers accepted

Our group has 3 papers accepted, and also has 3 collaborative papers with University of Notre Dame and Rochester Institute of Technology to be presented at IEDM 2020 virtual in Dec. 2020. This is a new record of IEDM papers of our group, congratulations to all the authors!

  1. X. Peng, W. Chakraborty, A. Kaul, M. S. Bakir, S. Datta, S. Yu, “Benchmarking monolithic 3D integration for compute-in-memory accelerators: overcoming ADC bottlenecks and maintaining scalability to 7nm or beyond,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
  2. P. Wang, X. Peng, W. Chakraborty, A. I. Khan, S. Datta, S. Yu, “Cryogenic benchmarks of embedded memory technologies for recurrent neural network based quantum error correction,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
  3. J. Hur, P. Wang, Z. Wang, G. Choe, N. Tasneem, A. I. Khan, S. Yu, “Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
  4. S. Dutta, H. Ye, W. Chakraborty, Y.-C. Luo, M. San Jose, B. Grisafe, A. Khanna, I. Lightcap, S. Shinde, S. Yu, S. Datta, “Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
  5. Z. Wang, M. M. Islam, P. Wang, S. Deng, S. Yu, A. I. Khan, K. Ni, “Depolarization field induced instability of polarization states in HfO2 based ferroelectric FET,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
  6. A. Kaul, X. Peng, S. K. Raja, S. Yu, M. S. Bakir, “Thermal modeling of 3D polylithic integration and implications on BEOL RRAM performance, IEEE International Electron Devices Meeting (IEDM) 2020, virtual, invited.

Prof. Yu received DAC Under-40 Innovators Award

Prof. Yu received the ACM/IEEE Design Automation Conference (DAC) Under-40 Innovators Award in 2020 owing to his contribution to the pioneering research on benchmarking hardware accelerators for machine learning. See the news at

https://www.dac.com/media-center/dac-news/three-exceptional-innovators-selected-receive-design-automation-conference

https://www.ece.gatech.edu/news/636895/yu-chosen-dac-under-40-innovators-award