ECE 6465 Memory Device Technologies and Applications
Previously (8823/8803) Offering: Fall 2018, Fall 2019 (Lecture Videos available at YouTube Link), Fall 2021 (Lecture Videos available at YouTube Link) and Fall 2024 (Lecture Videos available at YouTube Link). Next offering is Fall 2025.
Recommended textbook: S. Yu, Semiconductor Memory Devices and Circuits, Publisher: CRC Press/Taylor & Francis, 2022. [Link]
Course Outline
- Semiconductor Memory and CMOS Scaling Overview
–Industry trend and technology scaling
- SRAM
–6T cell operation
–Noise margin, stability, scaling issues, and layout
–Variability and reliability issues
–Recent trends: FinFET/Stacked nanosheets
- DRAM
–1T-1C cell operation
–Fabrication technology, capacitor structure, and layout
–Recent trends: 3D TSV based HBM and 3D stackable DRAM
–Embedded DRAM
- FLASH memory
–FLASH device physics
–NAND vs. NOR architecture
–Reliability and scaling issues
–Recent trends: 3D vertical NAND
- Emerging memories
–Cross-point array architecture (3D X-point)
–RRAM
–PCM
–STT-MRAM/SOT-MRAM
–FeFET/FeRAM
- Memory Array Design
–Peripheral circuits
–Sense amplifier design
–Bank-level simulator
- New applications
–In-memory computing for AI hardware
ECE 3030 Physical Foundations of Computer Engineering
Offering: Summer 2019, Spring 2020 (Lecture Videos available at YouTube Link), Fall 2020 (Lecture Videos available at YouTube Link), Spring 2022 and Spring 2023
Course Outline
- Resistors and Interconnects
- Semiconductor Physics
–From bond model to band model
–Carrier statistics (electrons and holes)
–Carrier transport (drift and diffusion)
- Transistor- MOSFET
–p/n junction, I-V, band diagram
–MOS-Cap, Electrostatics, band diagram perpendicular to channel
–Id-Vd and Id-Vg curves, band diagram along channel
–Subthreshold current and standby leakage
- CMOS Inverter
–Voltage transfer curve
–Noise margin
–Delay
–Power/Energy
- CMOS Scaling
- Memory Technologies
–SRAM
–DRAM
–FLASH
- Advanced CMOS Technologies