Our group has 3 papers accepted, and also has 3 collaborative papers with University of Notre Dame and Rochester Institute of Technology to be presented at IEDM 2020 virtual in Dec. 2020. This is a new record of IEDM papers of our group, congratulations to all the authors!
- X. Peng, W. Chakraborty, A. Kaul, M. S. Bakir, S. Datta, S. Yu, “Benchmarking monolithic 3D integration for compute-in-memory accelerators: overcoming ADC bottlenecks and maintaining scalability to 7nm or beyond,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
- P. Wang, X. Peng, W. Chakraborty, A. I. Khan, S. Datta, S. Yu, “Cryogenic benchmarks of embedded memory technologies for recurrent neural network based quantum error correction,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
- J. Hur, P. Wang, Z. Wang, G. Choe, N. Tasneem, A. I. Khan, S. Yu, “Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
- S. Dutta, H. Ye, W. Chakraborty, Y.-C. Luo, M. San Jose, B. Grisafe, A. Khanna, I. Lightcap, S. Shinde, S. Yu, S. Datta, “Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
- Z. Wang, M. M. Islam, P. Wang, S. Deng, S. Yu, A. I. Khan, K. Ni, “Depolarization field induced instability of polarization states in HfO2 based ferroelectric FET,” IEEE International Electron Devices Meeting (IEDM) 2020, virtual.
- A. Kaul, X. Peng, S. K. Raja, S. Yu, M. S. Bakir, “Thermal modeling of 3D polylithic integration and implications on BEOL RRAM performance, IEEE International Electron Devices Meeting (IEDM) 2020, virtual, invited.